US Patent 7511984 Phase change memory
Patent 7511984 was granted and assigned to Micron Technology on March, 2009 by the United States Patent and Trademark Office.
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Patent Inventor Names
Jun Liu0
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Patent abstract
A PCRAM cell has a high resistivity bottom electrode cap to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region from the bottom electrode, and reducing the programming current requirements.
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US Patent 07511984 Phase change memory US Patent 7511984 Phase change memory
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Patent Number
075119840
Patent Number
75119840
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Current Assignee
Patent Jurisdiction
Patent Number
075119840
Date of Patent
March 31, 2009
0Patent Application Number
115126850
Date Filed
August 30, 2006
0Official Website
Patent Primary Examiner
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US Patent 07511984 Phase change memory
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07511984
Date of patent
March 31, 2009
Patent application number
11512685
Date Filed
August 30, 2006
Patent primary examiner
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