Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Nima Mokhlesi0
Date of Patent
March 31, 2009
0Patent Application Number
116937690
Date Filed
March 30, 2007
0Patent Primary Examiner
Patent abstract
A string of nonvolatile memory cells are formed with control gates extending between floating gates, control gates and floating gates separated by tunnel dielectric layers. Electron tunneling between control gates and floating gates is used for programming. A process for forming a memory array forms odd numbered floating gates from a first layer and even numbered floating gates from a second layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
