Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Susumu Ohmi0
Date of Patent
March 31, 2009
0Patent Application Number
112115440
Date Filed
August 26, 2005
0Patent Primary Examiner
Patent abstract
A nitride semiconductor laser device of the present invention has an electrical connection point which is provided outside of a pair of trenches in the surface of an upper electrode layer so as to make an electrical connection to the outside. The thickness between the surface of the upper electrode layer and a nitride semiconductor growth layer in the electrical connection point is larger than the thickness between the upper electrode layer and the nitride semiconductor growth layer immediately above a ridge.
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