Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 7, 2009
Patent Application Number
11928750
Date Filed
October 30, 2007
Patent Primary Examiner
Patent abstract
A semiconductor device includes a first diffusion region including germanium atoms and first impurity atoms, provided on a surface layer of a semiconductor substrate, the first impurity atoms contributing to electric conductivity, and a second diffusion region including second impurity atoms, provided shallower than the first diffusion region from a surface of the first diffusion region, the second impurity atoms not contributing to the electric conductivity.
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