Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shuhei Ogawa0
Date of Patent
April 14, 2009
0Patent Application Number
105225690
Date Filed
August 5, 2003
0Patent Primary Examiner
Patent abstract
The present invention is a method of etching a lower layer film (64) of an organic material formed on a surface layer (61) of a substrate, using an upper layer film (63) of an Si-containing organic material as a mask. A mixed gas containing an NH3 gas and an O2 gas is supplied into the processing vessel as an etching gas, so as to perform etching by a plasma of the etching gas. When the etching gas is supplied into the processing vessel, a CD shift value of etching can be controlled by adjusting a flow ratio of O2 gas to the NH3 gas. Specifically, a satisfactory CD shift value can be obtained when the flow ratio is from 0.5 to 20%, and preferably, 5 to 10%.
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