Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Lawrence E. Felton0
John R. Martin0
Date of Patent
April 21, 2009
0Patent Application Number
109145750
Date Filed
August 9, 2004
0Patent Primary Examiner
Patent abstract
A method of producing a MEMS device forms structure on a non-standard device wafer. To that end, the method provides the noted non-standard device wafer, which has a wafer outer diameter and a non-standard thickness. As known by those in the art, a standard device wafer has a standard thickness when its outer diameter equals the wafer outer diameter. In illustrative embodiments, however, the non-standard thickness is smaller than the standard thickness. The method then forms structure on the non-standard device wafer.
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