Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 21, 2009
Patent Application Number
10432861
Date Filed
November 28, 2001
Patent Primary Examiner
Patent abstract
A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
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