Patent attributes
A static random-access memory (SRAM) device may include a bulk MOS transistor on a semiconductor substrate having a source/drain region therein, an insulating layer on the bulk MOS transistor, and a thin-film transistor having a source/drain region therein on the insulating layer above the bulk MOS transistor. The device may further include a multi-layer plug between the bulk MOS transistor and the thin-film transistor. The multi-layer plug may include a semiconductor plug directly on the source/drain region of the bulk MOS transistor and extending through at least a portion of the insulating layer, and a metal plug directly on the source/drain region of the thin-film transistor and the semiconductor plug and extending through at least a portion of the insulating layer. Related methods are also discussed.
