US Patent 7521771 Method for fabricating a semiconductor device
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Patent Inventor Names
Yong Keon Choi0
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Patent abstract
A semiconductor device including a semiconductor substrate having first and second device regions. A first trench is formed in the first region and a second trench is formed in the second region. The first trench and the second trench have different widths and different depths. The first trench and the second trench define device isolation regions and active regions.
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US Patent 07521771 Method for fabricating a semiconductor device US Patent 7521771 Method for fabricating a semiconductor device
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Patent Number
075217710
Patent Number
75217710
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Patent Jurisdiction
Patent Number
075217710
Date of Patent
April 21, 2009
0Patent Application Number
110247480
Date Filed
December 30, 2004
0Official Website
Patent Primary Examiner
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US Patent 07521771 Method for fabricating a semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07521771
Date of patent
April 21, 2009
Patent application number
11024748
Date Filed
December 30, 2004
Patent primary examiner
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