Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 21, 2009
Patent Application Number
11341588
Date Filed
January 30, 2006
Patent Primary Examiner
Patent abstract
An intrinsic GaAs waveguide layer is formed on a p-type AlGaAs cladding layer, a quantum dot active layer is formed further thereon. An n-type AlGaAs cladding layer is formed on the center portion of the quantum dot active layer. Thus-configured semiconductor laser is allowed to successfully suppress the area of the p-n junction plane to a small level, and to obtain a high level of reliability, because there is no need of processing the center portion of the quantum dot active layer, contributive to laser oscillation.
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