Patent attributes
In a method of manufacturing a semiconductor device, a polycrystalline silicon film is deposited on a gate insulating film formed over a substrate and is doped with a P-type impurity to form the first polycrystalline silicon film with a P-type conductivity. A high melting point polycide film is deposited on the P-type first polycrystalline silicon film. The P-type first polycrystalline silicon film, high melting point metallic polycide film, and insulating film are etched to form a gate electrode. A second polycrystalline silicon film different from the P-type first polycrystalline silicon film is deposited on the substrate. The second polycrystalline silicon film is etched to form a resistor composed of the second polycrystalline silicon film.
