Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 5, 2009
Patent Application Number
11689896
Date Filed
March 22, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A vertical cell is realized. The cell includes a first vertical metal oxide semiconductor (MOS) transistor having a body between a drain region and a source region and a second vertical MOS transistor including at least a portion of the body of the first vertical MOS transistor.
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