US Patent 7530005 Storage device

The present invention has been made to realize a storage device capable of normally reading out data from the erase processing applied area. In a semiconductor storage device 1, when data read processing is performed for the erase-processing applied area in a memory section 2 to read out erase-state actual data Ddr and erase-state parity data Ddp each containing only “1s”, the erase-state actual data Ddr and erase-state parity data Ddp are inverted by a third data inverting circuit 13 to make all the values thereof “0”, followed by execution of the error detection processing. With the above configuration, it is possible to prevent an error from being detected in the error detection processing.