Patent attributes
A memory system having a selectable configuration for sense amplifiers is included. The memory system can include bit cells and a switch module coupled to the bit cell and to a first portion of a sense amplifier. The switch module can connect, disconnect or cross couple the bit cell to the sense amplifier based on a test for the input offset voltage of first portion of the sense amplifier. A similar configuration can be implemented by a second portion of the sense amplifier. The system can also include a programmer module to configure a setting of the switch module and can include a column select module to couple the bit cells to the sense amplifiers based on what column of bit cell is to be read. Other embodiments are also disclosed.