Patent attributes
A method for fabricating a semiconductor device is provided. The method includes: preparing a substrate defined as active regions and inactive regions and provided with a plurality of conductive patterns; forming a buffer layer over the plurality of conductive patterns; forming an organic material having fluidity better than that of a photoresist layer on the buffer layer; flowing the organic material between the conductive patterns through a thermal treatment process, thereby filling a portion of each gap between the conductive patterns; forming the photoresist layer over the organic material and the buffer layer; forming a plurality of photoresist patterns opening the active regions through a photo-exposure process and a developing process; and performing an ion-implantation process using the plurality of photoresist patterns, thereby forming a plurality of junction regions in the active regions of the substrate.
