Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshiki Hara0
Date of Patent
May 19, 2009
0Patent Application Number
114865550
Date Filed
July 13, 2006
0Patent Primary Examiner
Patent abstract
A semiconductor device, comprises: a transistor having structured to include a gate electrode formed on a semiconductor layer on a semiconductor substrate via a gate insulating film, and a source layer and a drain layer formed on the semiconductor layer sandwiching the gate electrode; a hollow portion existing between the source layer and the semiconductor substrate, and between the drain layer and the semiconductor substrate, respectively; and the hollow portion in absence between the semiconductor layer under the gate electrode and the semiconductor substrate.
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