Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshiharu Furukawa0
Mark C. Hakey0
Mark E. Masters0
Peter H. Mitchell0
Charles W. Koburger, III0
David V. Horak0
Date of Patent
May 19, 2009
Patent Application Number
10906016
Date Filed
January 31, 2005
Patent Primary Examiner
Patent abstract
A hybrid semiconductor structure which includes a horizontal semiconductor device and a vertical carbon nanotube transistor, where the vertical carbon nanotube transistor and the horizontal semiconductor device have at least one shared node is provided. The at least one shared node can include, for example, a drain, source or gate electrode of a FET, or an emitter, collector, or base of a bipolar transistor.
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