Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
In-Soo Jung0
Si-Young Choi0
Byeong-Chan Lee0
Deok-Hyung Lee0
Jin-Hwa Heo0
Date of Patent
May 19, 2009
0Patent Application Number
115862250
Date Filed
October 25, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is provided on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is provided in the trench such that a surface of the first insulation layer is recessed beneath a surface of the fin exposing sidewalls of the fin. A protection layer is provided on the first insulation layer and a second insulation layer is provided on the protection layer in the trench such that protection layer is between the second insulation layer and the sidewalls of the fin.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
