US Patent 7538043 Phase change memory device and fabrication method thereof
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Patent Inventor Names
Chien-Min Lee0
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Patent abstract
A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.
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US Patent 07538043 Phase change memory device and fabrication method thereof US Patent 7538043 Phase change memory device and fabrication method thereof
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Patent Number
075380430
Patent Number
75380430
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Patent Jurisdiction
Patent Number
075380430
Date of Patent
May 26, 2009
0Patent Application Number
116159090
Date Filed
December 22, 2006
0Official Website
Patent Primary Examiner
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US Patent 07538043 Phase change memory device and fabrication method thereof
Infobox
Is a
Patent jurisdiction
Patent number
07538043
Date of patent
May 26, 2009
Patent application number
11615909
Date Filed
December 22, 2006
Patent primary examiner
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