Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshihiko Hanamaki0
Kenichi Ono0
Date of Patent
May 26, 2009
0Patent Application Number
112580530
Date Filed
October 26, 2005
0Patent Primary Examiner
Patent abstract
In a semiconductor laser, a n-type AlGaInP clad layer is formed on a n-type GaAs substrate and an active layer having an emission wavelength of 600 to 850 nm is formed on the n-type AlGaInP clad layer. A p-type AlGaInP clad layer is formed on the active layer and a p-type AlGaAs contact layer in which the Al composition is controlled so that the p-type AlGaAs contact layer has an optical bandgap larger than that of the active layer is formed on the p-type AlGaInP clad layer. A p-type GaAs cap layer is formed on the p-type AlGaAs contact layer.
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