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US Patent 7541866 Enhanced doherty amplifier with asymmetrical semiconductors

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Scott Widdowson0

Martin O'Flaherty0

Gregory Bowles0

John Ilowski0

Date of Patent

June 2, 2009

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Patent Application Number

115370840

Date Filed

September 29, 2006

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Patent Citations Received

US Patent 12136901 Broadband, high-efficiency, non-modulating power amplifier architecture

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US Patent 11705869 Low-load-modulation power amplifier

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US Patent 11716058 No-load-modulation, high-efficiency power amplifier

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US Patent 11843352 Inverted Doherty power amplifier with large RF and instantaneous bandwidths

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US Patent 11888448 Low-load-modulation broadband amplifier

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US Patent 11990871 Inverted Doherty power amplifier with large RF fractional and instantaneous bandwidths

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US Patent 12028022 Hybrid power amplifier with GaN-on-Si and GaN-on-SiC circuits

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Patent Primary Examiner

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Patent abstract

The present disclosures an amplification unit which comprises a first amplifier and a second amplifier connected in parallel, the first amplifier and the second amplifier comprising semiconductor devices that are not the same amplifier design. The present application also discloses a signal input line connected to the first amplifier and the second amplifier. A signal output line is also disclosed which is connected to the first amplifier and the second amplifier.

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