Patent attributes
A semiconductor memory device includes a plurality of sense amplifiers each supplying a higher write potential and a lower write potential to each of memory cells; a driver circuit supplying the higher write potential to each of the sense amplifiers; a driver circuit supplying the lower write potential to each of the sense amplifiers; and an auxiliary driver circuit supplying either the lower write potential or an auxiliary potential lower than the lower write potential to each of the sense amplifiers. It is thereby possible to suppress a fluctuation in the lower write potential at start of a sensing operation. Therefore, the sensing operation can be accelerated as compared with a sensing operation performed by sense amplifiers in a conventional semiconductor memory device.
