US Patent 7542497 AlGaInN-based lasers with dovetailed ridge
Patent 7542497 was granted and assigned to BinOptics on June, 2009 by the United States Patent and Trademark Office.
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Patent abstract
A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.
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US Patent 07542497 AlGaInN-based lasers with dovetailed ridge US Patent 7542497 AlGaInN-based lasers with dovetailed ridge
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Patent Number
0754249700
Patent Number
754249700
Edits on 28 Mar, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075424970
Date of Patent
June 2, 2009
0Patent Application Number
118268090
Date Filed
July 18, 2007
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075424970
Date of Patent
June 2, 2009
0Patent Application Number
118268090
Date Filed
July 18, 2007
0Official Website
Patent Primary Examiner
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US Patent 07542497 AlGaInN-based lasers with dovetailed ridge
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07542497
Date of patent
June 2, 2009
Patent application number
11826809
Date Filed
July 18, 2007
Patent primary examiner
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