Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hyun-Pil Noh0
Date of Patent
June 9, 2009
0Patent Application Number
115024450
Date Filed
August 11, 2006
0Patent Primary Examiner
Patent abstract
Example embodiments relate to an image sensor and a fabrication method thereof, capable of reducing dark current and a fabrication method thereof. The image sensor may include a semiconductor substrate including an active region defined by an isolation layer, a photoelectric-conversion region and a charge-movement-prevention region formed at an interface between the photoelectric-conversion region and the isolation layer.
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