Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jin Hyo Jung0
Date of Patent
June 9, 2009
0Patent Application Number
112055400
Date Filed
August 16, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor device and a method for fabricating the same may improve the isolation characteristics without deterioration of the junction diode characteristics and an increase in a threshold voltage of a MOS transistor. The device includes a semiconductor substrate; an STI layer in a predetermined portion of the semiconductor substrate, dividing the semiconductor substrate into an active region and a field region; and a field channel stop ion implantation layer in the semiconductor substrate under the STI layer.
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