Patent attributes
A method for fabricating a contact hole is provided. A semiconductor substrate having thereon a conductive region is prepared. A dielectric layer is deposited on the semiconductor substrate and the conductive region. An etching resistive layer is coated on the dielectric layer. A silicon-containing hard mask bottom anti-reflection coating (SHB) layer is then coated on the etching resistive layer. A photoresist layer is then coated on the SHB layer. A lithographic process is performed to form a first opening in the photoresist layer. Using the photoresist layer as a hard mask, the SHB layer is etched through the first opening, thereby forming a shrunk, tapered second opening in the SHB layer. Using the etching resistive layer as an etching hard mask, etching the dielectric layer through the second opening to form a contact hole in the dielectric layer.
