US Patent 7544963 Binary group III-nitride based high electron mobility transistors

Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III-nitride HEMTs include a first binary Group III-nitride barrier layer, a binary Group III-nitride channel layer on the first barrier layer; and a second binary Group III-nitride barrier layer on the channel layer. In some embodiments, the binary Group III-nitride HEMTs include a first AIN barrier layer, a GaN channel layer and a second AIN barrier layer.