US Patent 7547605 Microelectronic device and a method for its manufacture

Provided are a microelectronic device and a method for its manufacture. In one example, the method includes providing a semiconductor substrate layer having a first material (e.g., silicon or silicon germanium). An insulating layer is formed on the semiconductor substrate layer with multiple openings exposing portions of the surface of the semiconductor substrate layer. A semiconductor layer is then formed in the openings directly upon the exposed portions of the semiconductor substrate layer using a second material different from the first material (e.g., silicon germanium or silicon). In other examples, multiple semiconductor layers may be formed using alternating materials.