Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 16, 2009
Patent Application Number
10932150
Date Filed
September 1, 2004
Patent Primary Examiner
Patent abstract
The invention includes a transistor device having a semiconductor substrate with an upper surface. A pair of source/drain regions are formed within the semiconductor substrate and a channel region is formed within the semiconductor substrate and extends generally perpendicularly relative to the upper surface of the semiconductor substrate. A gate is formed within the semiconductor substrate between the pair of the source/drain regions.
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