Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Steven M. George0
Craig Metzner0
M. Noel Rocklein0
Shreyas Kher0
Yeong Kwan Kim0
Date of Patent
June 16, 2009
0Patent Application Number
114209280
Date Filed
May 30, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.
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