Patent attributes
A pressure sensor package of the present invention includes a pressure sensor including a cavity disposed within a semiconductor substrate, wherein a region of the substrate above the cavity comprises a diaphragm section; a plurality of pressure-sensitive elements, wherein at least of portion of each pressure-sensitive element is disposed on the diaphragm section; and a plurality of conductive portions laterally spaced from the cavity and electrically connected to the pressure sensitive elements, a plurality of electrically conductive bumps arranged on the conductive portions and electrically connected to the conductive portions, wherein a total thickness D1 of the semiconductor substrate, a thickness D2 of the diaphragm section, a thickness D3 of the cavity, and a thickness D4=D1−(D2+D3) satisfy the relationships: (D2+D3) in a range of approximately 5-20 μm, and D1 not less than about 100 μm.
