US Patent 7550330 Deep junction SOI MOSFET with enhanced edge body contacts
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Patent Inventor Names
Jack A. Mandelman0
Thomas W. Dyer0
Zhijiong Luo0
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Patent abstract
A semiconductor structure is provided that has body contacts that are located at the edges of the device channel and a buried insulating region under the device channel that is shallower than the buried insulating regions under the source/drain junctions. A method of forming such a semiconductor structure is also described. The inventive method provides for self-alignment of the various features mentioned above with the gate conductor of the structure.
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US Patent 07550330 Deep junction SOI MOSFET with enhanced edge body contacts US Patent 7550330 Deep junction SOI MOSFET with enhanced edge body contacts
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Patent Number
075503300
Patent Number
75503300
Edits on 27 Apr, 2023
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Patent Jurisdiction
Patent Number
075503300
Date of Patent
June 23, 2009
0Patent Application Number
115643520
Date Filed
November 29, 2006
0Official Website
Patent Primary Examiner
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US Patent 07550330 Deep junction SOI MOSFET with enhanced edge body contacts
Infobox
Is a
Patent jurisdiction
Patent number
07550330
Date of patent
June 23, 2009
Patent application number
11564352
Date Filed
November 29, 2006
Patent primary examiner
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