Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 23, 2009
Patent Application Number
10958970
Date Filed
October 4, 2004
Patent Citations Received
Patent Primary Examiner
Patent abstract
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.
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