US Patent 7551483 Non-volatile memory with predictive programming

In a nonvolatile memory having an array of memory cells, wherein the memory cells are individually programmable to one of a range of threshold voltage levels, there is provided a predictive programming mode in which a predetermined function predicts what programming voltage level needs to be applied in order to program a given memory cell to a given target threshold voltage level. In this way, no verify operation needs to be performed, thereby greatly improving the performance of the programming operation. In a preferred embodiment, the predetermined function is linear and is calibrated for each memory cell under programming by one or more checkpoints. A checkpoint is a set of coordinates on the predetermined function determined by a conventional programming mode employing alternating program and verify operations.