US Patent 7551489 Multi-level memory cell sensing
Patent 7551489 was granted and assigned to Intel on June, 2009 by the United States Patent and Trademark Office.
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Patent abstract
A multi-level cell memory device performs a read by providing a stepped voltage waveform on a wordline, and comparing cell currents to a substantially constant reference current. Prior to the application of the stepped voltage waveform, the wordline may share charge with another circuit node.
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US Patent 07551489 Multi-level memory cell sensing US Patent 7551489 Multi-level memory cell sensing
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Patent Number
0755148900
Patent Number
755148900
Edits on 4 Apr, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075514890
Date of Patent
June 23, 2009
0Patent Application Number
113205290
Date Filed
December 28, 2005
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075514890
Date of Patent
June 23, 2009
0Patent Application Number
113205290
Date Filed
December 28, 2005
0Official Website
Patent Primary Examiner
Edits on 15 Jun, 2022
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US Patent 07551489 Multi-level memory cell sensing
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07551489
Date of patent
June 23, 2009
Patent application number
11320529
Date Filed
December 28, 2005
Patent primary examiner
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