Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shunpei Yamazaki0
Akiharu Miyanaga0
Hisashi Ohtani0
Satoshi Teramoto0
Date of Patent
June 30, 2009
0Patent Application Number
113226530
Date Filed
January 3, 2006
0Patent Primary Examiner
Patent abstract
A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
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