Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takamichi Fukui0
Date of Patent
July 7, 2009
0Patent Application Number
118326790
Date Filed
August 2, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device has a semiconductor substrate having an impurity-diffused region and a device isolation insulating film formed in the surficial portion thereof, a gate electrode formed on the semiconductor substrate, a contact formed on the gate electrode and connected to the gate electrode, and a protective film disposed between the semiconductor substrate and the gate electrode, below the connecting portion between the gate electrode and the contact, formed wider in width than the gate electrode in a sectional view taken along the direction of gate length of the gate electrode.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
