US Patent 7558299 Semiconductor saturable absorber and fabrication method thereof
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Patent abstract
A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier layer formed on the other side of the AlGaInAs QW. Each of the InAlAs barrier layers has a width being a half-wavelength of a light emitted by the AlGaInAs QW.
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US Patent 07558299 Semiconductor saturable absorber and fabrication method thereof US Patent 7558299 Semiconductor saturable absorber and fabrication method thereof
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Patent Number
0755829900
Patent Number
755829900
Edits on 18 May, 2023
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Official Website
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Infobox
Is a
Patent Jurisdiction
Patent Number
075582990
Date of Patent
July 7, 2009
0Patent Application Number
119714010
Date Filed
January 9, 2008
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
075582990
Date of Patent
July 7, 2009
0Patent Application Number
119714010
Date Filed
January 9, 2008
0Official Website
Patent Primary Examiner
Edits on 18 Jun, 2022
Golden AI
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US Patent 07558299 Semiconductor saturable absorber and fabrication method thereof
Infobox
Is a
Patent jurisdiction
Patent number
07558299
Date of patent
July 7, 2009
Patent application number
11971401
Date Filed
January 9, 2008
Patent primary examiner
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