Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yukio Komatsu0
Naoshi Adachi0
Date of Patent
July 14, 2009
Patent Application Number
11632875
Date Filed
July 19, 2005
Patent Primary Examiner
Patent abstract
A manufacturing method for a SIMOX substrate for obtaining a SIMOX substrate by subjecting a silicon substrate having oxygen ions implanted thereinto by heat treatment at 1300 to 1350° C. in an atmosphere of a gas mixture of argon and oxygen, the method includes: performing a pre-heat-treatment to the silicon substrate for five minutes to four hours within the temperature range of 1000° C. to 1280° C. in an atmosphere of inert gas, reducing gas, or a gas mixture of inert gas and reducing gas, after the oxygen ions are implanted and before the heat treatment is performed.
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