US Patent 7560395 Atomic layer deposited hafnium tantalum oxide dielectrics
Patent 7560395 was granted and assigned to Micron Technology on July, 2009 by the United States Patent and Trademark Office.
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A dielectric layer containing hafnium tantalum film arranged as a structure of one or more monolayers and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. In an embodiment, a hafnium tantalum oxide film may be formed by depositing hafnium and tantalum by atomic layer deposition onto a substrate surface. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film arranged as a structure of one or more monolayers, and methods for forming such structures.
US Patent 07560395 Atomic layer deposited hafnium tantalum oxide dielectrics US Patent 7560395 Atomic layer deposited hafnium tantalum oxide dielectrics
US Patent 07560395 Atomic layer deposited hafnium tantalum oxide dielectrics
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