Patent attributes
The method of manufacturing a semiconductor device according to the present invention includes: forming an interconnect trench in an insulating film formed on a semiconductor substrate (S100); forming a barrier metal layer on the whole surface of the insulating film (S102); forming a copper layer on the whole surface of the barrier metal layer so that the copper layer is embedded in the interconnect trench (S104); removing the copper layer outside the interconnect trench by polishing under a condition that the barrier metal layer is left on the surface of the insulating film (S106); selectively forming a cap metal layer on the copper layer formed in the interconnect trench after the step of removing the copper layer by polishing (S108); and flattening the cap metal layer by polishing (S110).
