Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 4, 2009
Patent Application Number
11553313
Date Filed
October 26, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for forming an etch-stop layer and a resulting structure fabricated therefrom. The etch-stop layer has a semiconductor layer having a first surface and a boron layer formed below the first surface of the semiconductor layer. The boron layer has a full-width half-maximum (FWHM) thickness value of less than 100 nanometers. The boron layer is formed by a chemical vapor deposition (CVD) system.
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