US Patent 7572706 Source/drain stressor and method therefor
Patent 7572706 was granted and assigned to Freescale Semiconductor on August, 2009 by the United States Patent and Trademark Office.
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A method for forming a semiconductor device is provided. The method includes forming a gate structure overlying a substrate. The method further includes forming a sidewall spacer adjacent to the gate structure. The method further includes performing an angled implant in a direction of a source side of the semiconductor device. The method further includes annealing the semiconductor device. The method further includes forming recesses adjacent opposite ends of the sidewall spacer in the substrate to expose a first type of semiconductor material. The method further includes epitaxially growing a second type of semiconductor material in the recesses, wherein the second type of semiconductor material has a lattice constant different from a lattice constant of the first type of semiconductor material to create stress in a channel region of the semiconductor device.
US Patent 07572706 Source/drain stressor and method therefor US Patent 7572706 Source/drain stressor and method therefor
US Patent 07572706 Source/drain stressor and method therefor
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