Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shunpei Yamazaki0
Date of Patent
August 11, 2009
0Patent Application Number
113301520
Date Filed
January 12, 2006
0Patent Citations Received
0
Patent Primary Examiner
Patent abstract
A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFF of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.
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