Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 18, 2009
Patent Application Number
11451633
Date Filed
June 13, 2006
Patent Primary Examiner
Patent abstract
The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.
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