Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Date of Patent
August 18, 2009
0Patent Application Number
111902550
Date Filed
July 26, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Magnetic or magnetoresistive tunnel junctions (MTJs) having diffusion stop layers to eliminate or reduce diffusion of oxygen, nitrogen or other particles from the barrier layer to the ferromagnetic layers during the film deposition process including the barrier oxidation or nitridation process and the post annealing process. Such MTJs may be used in various applications including magnetic memory (MRAM) devices and magnetic recording heads.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
