Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yu-Lien Huang0
Hun-Jan Tao0
Jim Huang0
Ling-Yen Yeh0
Date of Patent
August 25, 2009
0Patent Application Number
113525880
Date Filed
February 13, 2006
0Patent Primary Examiner
Patent abstract
A method for improving uniformity of stressors of MOS devices is provided. The method includes forming a gate dielectric over a semiconductor substrate, forming a gate electrode on the gate dielectric, forming a spacer on respective sidewalls of the gate electrode and the gate dielectric, forming a recess in the semiconductor adjacent the spacer, and depositing SiGe in the recess to form a SiGe stressor. The method further includes etching the SiGe stressor to improve the uniformity of SiGe stressors.
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