Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jun-ichi Hashimoto0
Date of Patent
August 25, 2009
0Patent Application Number
117166820
Date Filed
March 12, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor optical device includes a GaAs substrate of a first conductivity type; a III-V compound semiconductor layer provided on the GaAs substrate; an active layer provided on the III-V compound semiconductor layer; and a cladding layer of a second conductivity type provided on the active layer, wherein the band gap energy of the III-V compound semiconductor layer is larger than the band gap energy of the GaAs substrate, wherein the band gap energy of the active layer is smaller than the band gap energy of the GaAs substrate, and wherein the thickness of the III-V compound semiconductor layer is not more than 0.2 μm.
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