Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Morifumi Ohno0
Zhang Lulu0
Koji Akiyama0
Date of Patent
August 25, 2009
0Patent Application Number
115606530
Date Filed
November 16, 2006
0Patent Primary Examiner
Patent abstract
A semiconductor device includes a substrate including a semiconductor layer at a surface, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film. The gate electrode includes a conductive layer consisting of a nitride of a predetermined metal in contact with the gate insulating film. The conductive layer is formed by stacking a first film consisting of a nitride of the predetermined metal and a second film consisting of the predetermined metal, and diffusing nitrogen from the first film to the second film by solid-phase diffusion.
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