Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 25, 2009
Patent Application Number
11585879
Date Filed
October 25, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
In a power semiconductor device, a joint between the power semiconductor element and frame plated with Ni is composed of a laminated structure comprising, from the power semiconductor element side, an intermetallic compound layer having a melting point of 260° C. or higher, a Cu layer, a metal layer having a melting point of 260° C. or higher, a Cu layer and an intermetallic layer having a melting point of 260° C. or higher. The structure of the joint buffers the stress generated by the secondary mounting and temperature cycle at the bond for the semiconductor element and the frame having a large difference in thermal expansion coefficient from each other.
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